2013. 7. 19 1/4 semiconductor technical data 2N7002KU n channel mosfet revision no : 1 interface and switching application. features h esd protected 2000v.(human body model) h high density cell design for low r ds(on) . h voltage controlled small signal switch. maximum rating (ta=25 ? ) dim millimeters a b d e usm 2.00 0.201.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 c gh j k l k 1 3 2 e b d a j g c l h mm n n m 0.42 n 0.10 min + _ + _ + _ + _ 1. source2. gate 3. drain g d s type name lot no. ku equivalent circuit note 1) pulse width " 10 k , duty cycle " 1% note 2) surface mounted on 2 ? 2 fr4 board characteristic symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss ? 20 v drain current continuous i d 300 ma pulsed (note 1) i dp 1000 drain power dissipation (note 2) p d 270 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to ambient (note 2) r thja 460 ? /w marking downloaded from: http:///
2013. 7. 19 2/4 2N7002KU revision no : 1 g d v out v dd v in v gs s r l output pulse width inverted t r t d(on) 10% 90% 90% 90% 10% 50% 50% t on t f t d(off) t off input v out v in switching time test circuit electrical characteristics (ta=25 ? ) note 3) pulse test : pulse width " 80 k , duty cycle " 1% characteristic symbol test condition min. typ. max. unit. static drain-source breakdown voltage bv dss v gs =0v, i d =10 a 60 - - v zero gate voltage drain current i dss v ds =60v, v gs =0v - - 1 a gate-body leakage, forward i gssf v gs =20v, v ds =0v - - 10 a gate-body leakage, reverse i gssr v gs =-20v, v ds =0v - - -10 a gate threshold voltage v th v ds =v gs , i d =250 a 1.0 - 2.0 v drain-source on resistance r ds(on) v gs =10v, i d =300ma (note 3) - 1.2 1.5 ? v gs =4.5v, i d =250ma (note 3) - 1.45 1.9 forward transconductance g fs v ds =10v, i d =300ma 250 - - ms drain-source diode forward voltage v sd v gs =0v, i s =300ma - 0.9 1.2 v dynamic input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 20 - pf reverse transfer capacitance c rss - 4 - output capacitance c oss - 8 - switching time turn-on time t on v dd =30v, i d =300ma, v gs =10v (note 3) - 9 - ns turn-off time t off - 43 - downloaded from: http:///
2013. 7. 19 3/4 2N7002KU revision no : 1 drain current i d (a) fig 1. i d - v ds 0.0 0.0 0.3 0.6 0.9 1.2 1.5 1.0 2.0 3.0 4.0 5.0 0.0 1.0 2.0 3.0 4.0 6.05.0 0.1 0.2 0.3 0.4 0.5 0.6 drain-current i d (a) drain-source voltage v ds (v) fig 2. r ds(on) - i d -100 0.0 0 50 100 -50 150 0.5 1.0 2.01.5 v ds =10v common sourceta = 25 c common sourceta = 25 c 4v 10v v gs = 3v 5v 6v 7v on - resistance r ds ( ) 0.0 0.2 0.4 0.6 0.8 1.0 012345 drain-source voltage v gs (v) fig 5. i d - v gs drain current i d (a) fig 3. r ds(on) - t j normalized on - resistance r ds ( ) junction temperature t j ( ) c 125 c 25 c body diode forward voltage v sd (v) reverse drain current i (a) s fig 6. i - v ss d 0.01 0.0 0.1 1 0.5 1.0 1.5 2.0 3.02.5 -100 0.4 0 50 100 -50 150 0.6 1.00.8 fig 4. v th - t j normalized gate source thresholdvoltage vth (v) junction temperature t j ( ) c 1.41.2 common sourcev gs =v ds i d =250 a v gs =10v 10v 4v v gs = 3v 125 c 25 c downloaded from: http:///
2013. 7. 19 4/4 2N7002KU revision no : 1 1 10 100 0 5 10 15 20 30 25 drain-source voltage v (v) capacitance c (pf) fig 7. c - v ds ds common source ta=25 c f=1mhz v =0v gs fig 9. p - ta d ambient temperature ta ( c ) 02040 50 d 0 drain power dissipation p (mw) 60 80 100 120 140 160 100 150 200 250 300 350 fig 8. safe operation area ds drain-source voltage v (v) drain current i (a) d 10 -1 10 1 10 2 10 0 10 1 10 -3 10 -2 10 -1 10 0 dc c iss oss c c rss 10ms 1ms 10 ? 100 ? t c = 25 t j = 150 single nonrepetitive pulse c c operation in this area is limited by r ds(on) downloaded from: http:///
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